sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT3040KRC14
Data Manual:SCT3040KRC14.pdf
Brand:ROHM
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 1300pcs
SCT3040KRC14 N-Channel SiC (Silicon Carbide) Power MOSFET.
Product properties
Product Category: MOSFETs
Technology: SiC
Mounting Style: Through Hole
Package / Case: TO-247-4
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Id-Continuous drain current: 55 A
Rds On - drain-source on-resistance: 40 mOhms
Vgs - Gate-source voltage: - 4 V, + 22 V
Vgs th - gate source threshold voltage: 5.6 V
Qg - gate charge: 107 nC
Min. operating temperature: - 55 C
Max. operating temperature: + 175 C
Pd - power dissipation: 262 W
Channel mode: Enhancement
Series: SCT3x
Configuration: Single
Descent time: 19 ns
Forward transconductance - min: 8.3 S
Rise time: 19 ns
Transistor type: 1 N-Channel
Typical off delay time: 29 ns
Typical turn-on delay time: 6 ns
Part Number Alias: SCT3040KR
Unit weight: 6 g
Product Application
Solar inverters
DC/DC converters
Switching mode power supplies
Induction heating
Motor drives
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
ST
HiP247-3
3000
1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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ROHM Co., Ltd. is one of the worlds leading semiconductor manufacturers, headquartered in Kyoto, Japan, ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components have a place in the rapidly cha…
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