sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT3022KLGC11
Data Manual:SCT3022KLGC11.pdf
Brand:ROHM
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The SCT3022KLGC11 is a 1200V 95A N-channel SiC power MOSFET.
Product Properties
FET Type: N-channel
Technology: SiCFET (Silicon Carbide)
Drain source voltage (Vdss): 1200 V
Current at 25°C - continuous drain (Id): 95A (Tc)
Drive voltage (max Rds On, min Rds On): 18 V
On-resistance (max) for different Id, Vgs: 28.6 milliohms @ 36A, 18V
Vgs(th) for different Id (max): 5.6V @ 18.2mA
Gate charge (Qg) at different Vgs (max): 178 nC @ 10 V
Vgs (max): +22V, -4V
Input capacitance (Ciss) at different Vds (max): 2879 pF @ 800 V
FET function: -
Power dissipation (max): 427 W
Operating temperature: 175°C (TJ)
Mounting type: Through-hole
Supplier Device Package: TO-247N
Package/Case: TO-247-3
Applications
Solar inverters
DC/DC converters
Switching mode power supplies
Induction heating
Motor drives
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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