sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMBG120R140M1H
Data Manual:IMBG120R140M1H.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-263-7
Delivery Date:New and Original
Stock: 2000pcs
The IMBG120R140M1H is a 1200 V, 140 mΩ CoolSiC™ SiC MOSFET in a D2PAK-7L (TO-263-7) package, based on an advanced trench process that is optimised for both performance and reliability. Available in a modified 1200 V SMD package, it combines the low power consumption characteristics of CoolSiC technology with .XT interconnect technology to achieve maximum efficiency and passive cooling in applications such as motor drives, charging modules and industrial power supplies.
Feature Description
Extremely low switching losses
Short-circuit capability: 3 µs
Fully controllable dV/dt
Gate threshold voltage typical: VGS(th) = 4.5 V
Excellent anti-parasitic on-state capability, capable of 0 V shutdown
Robust body diode for hard switching
.XT interconnect technology for best-in-class thermal performance
Package creepage distance and electrical clearance > 6.1 mm
Sense pins for optimised switching performance
Application areas
Uninterruptible power supplies (UPS)
Electric vehicle fast charging
Industrial motor drives and controls
Solar system solutions
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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