sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Power Amplifier Module
Brand:NXP
Particular Year:24+
Package:QFN-34
Delivery Date:New and original
Stock: 2000pcs
The A5M37SG239T2 is a fully integrated Doherty power amplifier module for wireless infrastructure applications requiring small specifications and high performance. It is suitable for mMIMO systems, outdoor small cells and low power RF remote applications.
This mature LDMOS and GaN power amplifier is designed for TDD LTE and 5G systems. The module includes an automatic bias function that automatically sets the transistor bias value when powered on, as well as an integrated sensor that monitors temperature. This module can be communicated via I²C or SPI.
Features:
Level 2 module solution, including LDMOS integrated circuit as driver and GaN final amplifier
Advanced high performance internal package Doherty
Full match (50Ω input/output, DC blocking)
It is suitable for digital linearization system with low complexity
Reduce the memory effect and improve the linearization error vector amplitude
Automatic bias during power-on
Temperature sensing
Digital interface (I2C or SPI)
Embedded registers and Dacs for setting bias conditions
Tx Enable Control pins are used for TDD operations
Model
Brand
Package
Quantity
Describe
NXP
HLQFN-26
2000
5G/LTE Power Amplifier Module Designed for 5G and LTE Communication Devices
NXP
Module
2000
3400-3800MHz, 29dB, 5W Average Airfast® Power Amplifier Module (with Auto Bias Control)
NXP
Module
2000
3700-3980 MHz, 28 dB, Average 8 W Airfast® Power Amplifier Module (with Auto Bias Control)
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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