sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Power Amplifier Modules
Brand:NXP
Particular Year:24+
Package:Module
Delivery Date:New and Original
Stock: 2000pcs
The A3M39SL039IAAT2 is a fully integrated Doherty power amplifier module for wireless infrastructure applications requiring small form factor and high performance. It is suitable for massive MIMO systems, outdoor small cells and low power RF pull-out applications. This LDMOS power amplifier is validated and designed for TDD and FDD LTE systems. The module integrates an auto-bias function and an option to override production settings. Auto-bias automatically sets and adjusts the transistor bias to temperature at power-up. There is also an integrated sensor that monitors the temperature. Communication with the module is done via I2C or SPI.
A3M39SL039IAAT2 Features:
- Advanced high performance Doherty in a package
- Fully matched (50 ohm input/output, DC blocking)
- Designed for low complexity digital linearisation systems
- Power-on self-test
- Temperature sensing
- Digital interface (I2C or SPI)
- Embedded registers and DACs for setting bias conditions
- Tx enable control pin for TDD operation
Model
Brand
Package
Quantity
Describe
NXP
HLQFN-26
2000
5G/LTE Power Amplifier Module Designed for 5G and LTE Communication Devices
NXP
Module
2000
3400-3800MHz, 29dB, 5W Average Airfast® Power Amplifier Module (with Auto Bias Control)
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