sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:S27KL0642GABHI033
Data Manual:S27KL0642GABHI033.pdf
Brand:INFINEON
Particular Year:23+
Package:24FBGA
Delivery Date:New original
Stock: 3000pcs
The S27KL0642GABHI033 64Mbit HYPERRAM™ device is a high-speed CMOS, self-refreshing DRAM with an xSPI (Octal) interface. DRAM arrays use dynamic cells that need to be refreshed periodically. When the memory is not actively read or written by the xSPI interface master (host), the refresh control logic within the device manages the refresh operation on the DRAM array. Since the host does not need to manage any refresh operations, it appears to the host that the DRAM array uses static units to retain data without refreshing. Therefore, memory is more accurately described as pseudo-static RAM (PSRAM).
Product Specifications:
Memory type: volatile
Memory format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Storage capacity: 64Mbit
Memory organization: 8M x 8
Memory interface: HyperBus
Clock frequency: 200 MHz
Write cycle time - word, page: 35ns
Access time: 35 ns
Voltage - Power supply: 2.7V ~ 3.6V
Operating temperature: -40°C ~ 85°C (TA)
Mounting type: Surface mount type
Package/case: 24-VBGA
Supplier Package: 24-FBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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