sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:S27KL0643DPBHB023
Data Manual:S27KL0643DPBHB023.pdf
Brand:INFINEON
Particular Year:23+
Package:24-FBGA
Delivery Date:New and Original
Stock: 1000pcs
The Infineon® 64Mb HYPERRAM™ device is a high-speed CMOS, self-refreshing DRAM with an xSPI (octal) interface. This DRAM array uses dynamic cells that need to be refreshed periodically. When the xSPI interface host (host) is not actively reading or writing memory, refresh control logic within the device manages the refresh operation of the DRAM array. Since the host does not need to manage any refresh operations, the DRAM array appears to the host as if the memory uses static cells and does not need to be refreshed to retain data. For this reason, the memory is more accurately described as pseudo-static RAM (PSRAM).
Since DRAM cells cannot be refreshed during a read or write transaction, the host is required to limit the length of a read or write burst transfer so that an internal logic refresh operation can be performed when required. If the memory indicates that a refresh operation is required, the host must limit the duration of the transaction and allow an additional initial access delay at the start of a new transaction.
S27KL0643DPBHB023 Product Attributes:
Series: HyperRAM™ KL
Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Storage Capacity: 64Mbit
Memory Organisation: 8M x 8
Memory Interface: SPI - Eight I/O
Clock frequency: 166 MHz
Write cycle time - word, page: 36ns
Access time: 36 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Housing: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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