sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:S70KS1282GABHB030
Data Manual:S70KS1282GABHB030.pdf
Brand:INFINEON
Particular Year:23+
Package:24FBGA
Delivery Date:New original
Stock: 3000pcs
The S70KS1282GABHB030 128Mb HYPERRAM™ device is a high-speed CMOS, self-refreshing DRAM with an xSPI (Octal) interface. DRAM arrays need to be refreshed periodically to maintain data integrity. HyperRAM™ enables DRAM array refresh operations internally when the host is not actively reading or writing to memory. Since the host does not need to perform any refresh operations, the DRAM array is viewed by the host as a static unit that can retain data without refreshing. Therefore, HYPERRAM™ is called pseudo-static random access memory (PSRAM).
Product specifications:
Memory type: volatile
Memory format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Storage capacity: 128Mb
Memory organization: 16M x 8
Memory interface: HyperBus
Clock frequency: 200 MHz
Write cycle time - word, page: 35ns
Access time: 35 ns
Voltage - Power supply: 1.7V ~ 2V
Operating temperature: -40°C ~ 105°C (TA)
Mounting type: Surface mount type
Package/case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)
Basic product number: S70KS1282
Model
Brand
Package
Quantity
Describe
Winbond
WLCSP-49
2000
PSRAM (Pseudo-SRAM) Memory IC 256Mb HyperBus 200 MHz 35 ns 49-WFBGA (4x4)
INFINEON
49-FBGA
3000
PSRAM (Pseudo-SRAM) Memory IC 256Mb HyperBus 200 MHz 35 ns 49-FBGA (8x8)
INFINEON
24-FBGA
3000
PSRAM (Pseudo-SRAM) memory IC 64Mbit SPI-8 I/O 200 MHz 35 ns 24-FBGA (6x8)
INFINEON
24-FBGA
3000
PSRAM (Pseudo-SRAM) memory IC 64Mbit SPI-8 I/O 200 MHz 35 ns 24-FBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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