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The MSC017SMA120B is a 1200V, 113A silicon carbide (SiC) MOSFET in a TO-247-3 pin package with a power consumption of up TO 455W. The silicon carbide MOSFET reduces system cost by eliminating the need for any current diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, power supply and distribution.

Product specifications:

FET type: N channel

Technology: SiCFET (silicon carbide)

Drain-source voltage (Vdss) : 1200 V

Current at 25°C - Continuous Drain (Id) : 113A (Tc)

Driving voltage (maximum Rds On, minimum Rds On) : 20V

On-off resistance with different ids and Vgs (maximum) : 22 mm @ 40A, 20V

Vgs(th) (Max.) : 2.7V @ 4.5mA (standard)

Grid charge (Qg) at different Vgs (Max.) : 249 N@20 V

Vgs (Max.) : +22V, -10V

Input capacitance (Ciss) for different Vds (Max.) : 5280 pF @ 1000 V

FET function: -

Power dissipation (maximum) : 455W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Installation type: Through hole

Supplier component package: TO-247-3

Package/case: TO-247-3

Basic product number: MSC017SMA

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