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The MSC750SMA170B is a 1700 V, 7A silicon carbide (SiC) MOSFET in a TO-247-3 pin package with a power consumption of up TO 68W. The silicon carbide MOSFET reduces system cost by eliminating the need for any current diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, power supply and distribution.

Product specifications:

FET type: N channel

Technology: SiCFET (silicon carbide)

Drain-source voltage (Vdss) : 1700 V

Current at 25°C -- Continuous Drain (Id) : 7A (Tc)

Driving voltage (maximum Rds On, minimum Rds On) : 20V

On-off resistance with different Id and Vgs (Max.) : 940 milliohm @ 2.5A, 20V

Vgs(th) at different ids (Max.) : 3.25V@100µA (standard)

Grid charge (Qg) at different Vgs (Max.) : 11 N@20 V

Vgs (Max.) : +23V, -10V

Input capacitance (Ciss) for different Vds (Max.) : 184 pF @ 1360 V

FET function: -

Power dissipation (maximum) : 68W (Tc)

Operating temperature: -55°C ~ 175°C (TJ)

Installation type: Through hole

Supplier component package: TO-247-3

Package/case: TO-247-3

Basic product number: MSC750

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  A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

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• 6.Can the company issue an invoice?

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