sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Transistor
Brand:INFINEON
Particular Year:24+
Package:TO-247-4
Delivery Date:New and Original
Stock: 3000pcs
IMZC120R026M2H: CoolSiC™ 1200V SiC MOSFET G2 - Silicon Carbide MOSFET Transistors with .XT Interconnect Technology
Model: IMZC120R026M2H
Package: TO-247-4
Type: CoolSiC™ MOSFET Discrete Transistor
IMZC120R026M2H - Product Specifications:
Product Category: Silicon Carbide MOSFETs
Mounting Style: Through Hole
Package / Case: TO-247-4
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 1.2 kV
Id-Continuous drain current: 69 A
Rds On-drain on-resistance: 25 mOhms
Vgs - gate-source voltage: - 10 V, + 25 V
Vgs th - gate-source threshold voltage: 5.1 V
Qg - gate charge: 124 nC
Minimum operating temperature: - 55 °C
Maximum operating temperature: + 175 °C
Pd-Power dissipation: 289 W
Areas of application:
Uninterruptible Power Supplies (UPS)
Electric vehicle fast charging
Industrial motor drives and controls
Solar system solutions
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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