sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IGBT - Insulated Gate Bipolar Transistors
Brand:INFINEON
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
The IKWH60N67PR7 is a model in the TRENCHSTOP™ IGBT7 PR7 series from Infineon, specifically a 670V, 60A power IGBT with an anti-parallel diode. The IGBT is available in a TO-247-3-pin high creepage and gap package, which provides excellent electrical isolation and high thermal conduction efficiency.
Features
Improved EMI performance with reduced dv/dt
Ultra-low VCEsat = 1.4 V at 25°C (typical)
Higher VCE = 670 V
High creepage distances and clearances
Positive VCEsat temperature coefficient
These features make the IKWH60N67PR7 ideal for high power and high switching frequency applications, especially where high efficiency and reliability are required.
IKWH60N67PR7 Product Attributes
Manufacturer: Infineon
Product Category: Insulated Gate Bipolar Transistors (IGBTs)
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector-emitter maximum voltage VCEO: 670 V
Collector-emitter saturation voltage: 1.7 V
Gate/Emitter Maximum Voltage: 20 V
Continuous collector current at 25 C: 122 A
Pd-Power dissipation: 283 W
Minimum operating temperature: - 40 C
Maximum operating temperature: + 175 C
Maximum continuous collector current Ic: 122 A
Gate-emitter leakage current: 100 nA
Model
Brand
Package
Quantity
Describe
INFINEON
PG-VSON-8
3000
GaN Transistors - 700V Enhancement mode CoolGaN™ Transistor
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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