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Service Telephone:86-755-83294757
Trade Name:IGBT - Insulated Gate Bipolar Transistor
Brand:ST
Particular Year:25+
Package:TO-247-3
Delivery Date:New and original
Stock: 2500pcs
The STGWA30M65DF2AG is A automotive grade groove-gate field cutoff, 650 V, 30 A low loss M series IGBT transistor in a TO-247 long lead package. This device is part of the M series IGBT and represents the ideal balance between the performance and efficiency of the inverter system, where low loss and short-circuit functionality are of crucial importance.
Core parameters
IGBT type: Trench type field-stop
Voltage - collector and emitter breakdown (maximum value) : 650 V
Current - collector (Ic) (maximum value) : 87 A
Current-collector pulse (Icm) : 120 A
Vce(on) (maximum value) at different Vge and Ic: 2V @ 15V, 30A
Power - Maximum: 441 W
Switching energy: 756µJ (on), 1.057mJ (off)
Input type: Standard
Gate charge: 81.6 nC
The Td (on/off) value at 25°C is 21.6ns/138ns
Test conditions: 400V, 30A, 10 ohms, 15V
Reverse recovery time (trr) : 151 ns
Operating temperature: -55°C to 175°C (TJ)
Grade: Automotive grade
Qualification: AEC-Q101
Installation type: Through hole
Package: TO-247 long lead
Application scenarios
The STGWA30M65DF2AG IGBT is mainly used in motor drive, auxiliary load, thermal management and general inverter systems.
Model
Brand
Package
Quantity
Describe
ST
TO-247-3
3000
1600V, 30A trench gate field cut-off soft-switching IH2 series IGBT transistor
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