sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide MOSFET Transistors
Brand:INFINEON
Particular Year:24+
Package:PG-TO263-7
Delivery Date:New and Original
Stock: 2000pcs
AIMBG75R040M1H CoolSiC™ MOSFET 750V is a highly robust SiC MOSFET Transistors for the best system performance and reliability.It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density.
Features
Highly robust 750 V technology
Best-in-class RDS(on) x Qfr
Excellent Ron x Qoss and Ron x QG
Low Crss/Ciss together and high Vgsth
100% avalanche tested
.XT interconnection technology for best-in-class thermal performance
Benefits
Superior efficiency in hard switching
Enables higher switching frequency
Higher reliability
Withstand bus voltages beyond 500 V
Robustness against parasitic turn
Unipolar driving
Applications
High-voltage DC-DC converter for electric vehicles
On-board battery charger (OBC) for electric vehicles
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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