sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MSC100SM70JCU3
Data Manual:MSC100SM70JCU3.pdf
Brand:Microchip
Particular Year:23+
Package:SOT-227
Delivery Date:New and Original
Stock: 1600pcs
Automotive IGBT Modules MSC100SM70JCU3 N-Channel IGBT Silicon Carbide Modules 365W
Product Description
MSC100SM70JCU3 is Silicon carbide (SiC) Schottky diode, a buck chopper 700 V, 124 A full Silicon Carbide (SiC) power module.
Product Attributes
Product Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:124A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:19mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:215 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 700 V
Power Dissipation (Max):365W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
Base Product Number:MSC100SM70JCU3
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
650V, 25mohm, N-Channel - EliteSiC, Silicon Carbide (SiC) MOSFET Transistor
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
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