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Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Nexperia
Particular Year:24+
Package:TO-263-7
Delivery Date:New and original
Stock: 3000pcs
The NSF060120D7A0J is a silicon carbide based 1200 V power MOSFET in a standard 7-pin TO-263 plastic package (for surface mount PCB technology) with excellent RDSon temperature stability. The MOSFET is ideal for high-power and high-voltage industrial applications, including electric vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Specifications of NSF060120D7A0J:
Channel mode: Enhancement
Configuration: Single
Descent time: 7 ns
Id- Continuous drain current: 38 A
Maximum operating temperature: + 175°C
Minimum operating temperature: -55 °C
Installation style: SMD/SMT
Number of channels: 1 Channel
Package/housing: TO-263-7
Package: Reel
Encapsulation: Cut Tape
Encapsulation: MouseReel
Pd- Power dissipation: 167 W
Product type: SiC MOSFETS
Qg- Grid charge: 57 nC
Rds On- drain-source on-resistance: 60 mOhms
Rise time: 9 ns
Factory packing quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Typical shutdown delay: 14 ns
Typical connection delay: 12 ns
Vds- drain-source breakdown voltage: 1.2kV
Vgs - grid - source voltage: -10 V, + 22 V
Vgs TH-gate source threshold voltage: 2.9V
Model
Brand
Package
Quantity
Describe
TOSHIBA
TO-247-4
4333
SiC MOSFET Through hole N channel 1200 V 20A (Tc) 107W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 36A (Tc) 170W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 40A (Tc) 182W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET Through hole N Channel 1200 V 100A (Tc) 431W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 100A (Tc) 342W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N Channel 650 V 58A (Tc) 156W (Tc) TO-247-4L (X)
TOSHIBA
TO-247-4
3000
SiC MOSFET through hole N channel 650 V 20A (Tc) 76W (Tc) TO-247-4L (X)
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