sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Silicon Carbide (SiC) MOSFET
Brand:Nexperia
Particular Year:24+
Package:TO-263-7
Delivery Date:New and original
Stock: 3000pcs
The NSF040120D7A0J is a silicon carbide based 1200 V power MOSFET in a standard 7-pin TO-263 plastic package (for surface mount PCB technology) with excellent RDSon temperature stability. The MOSFETs are ideal for high-power and high-voltage industrial applications, including electric vehicle charging infrastructure, photovoltaic inverters and motor drives.
Specifications of NSF040120D7A0J:
Channel mode: Enhancement
Configuration: Single
Descent time: 8 ns
Id- Continuous drain current: 65 A
Maximum operating temperature: + 175°C
Minimum operating temperature: -55 °C
Installation style: SMD/SMT
Number of channels: 1 Channel
Package/housing: TO-263-7
Package: Reel
Encapsulation: Cut Tape
Encapsulation: MouseReel
Pd-power dissipation: 306 W
Product type: SiC MOSFETS
Qg- Grid charge: 95 nC
Rds On- drain-source on-resistance: 40 mOhms
Rise time: 23 ns
Factory packing quantity: 800
Subcategory: Transistors
Technology: SiC
Transistor polarity: N-Channel
Typical shutdown delay: 20 ns
Typical connection delay: 21 ns
Vds- drain-source breakdown voltage: 1.2kV
Vgs - grid - source voltage: -10 V, + 22 V
Vgs TH-gate source threshold voltage: 2.9V
Model
Brand
Package
Quantity
Describe
ON
TO-247-3
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L
ON
TO-247-4
3000
Silicon Carbide (SiC) MOSFET-EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
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