sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SiC Diode Modules
Brand:ON
Particular Year:24+
Package:PIM-50
Delivery Date:New and original
Stock: 1000pcs
NXH400B100H4Q2F2SG is a power module with dual channel fast capacitor boost. Integrated field cutoff trench IGBTs and Si/SiC diodes provide lower conduction and switching losses, enabling designers to achieve high efficiency and excellent reliability. The module is designed for solar inverter and energy storage system applications.
NXH400B100H4Q2F2SG specifications:
Product: Boost Power Modules
Configuration: IGBT Inverter
Maximum collector-emitter voltage VCEO: 1 kV
Collector-emitter saturation voltage: 1.88V
Continuous collector current at 25 C: 164 A
Grid-emitter leakage current: 1 uA
Pd-power dissipation: 396 W
Package/housing: PIM-50
Minimum operating temperature: -40 °C
Maximum operating temperature: + 175°C
Package: Tray
Trademark: onsemi
Maximum grid/emitter voltage: 30 V
Installation style: Chassis Mount
Product type: IGBT Modules
Series: NXH400B100H4Q2F2SG
Factory packing quantity: 36
Subcategory: IGBTs
Technology: Si
Brand name: EliteSiC
Model
Brand
Package
Quantity
Describe
Microchip
SOT-227-4
1000
Diode module 2 separate 700 V 100A (DC) bases mounted on SOT-227-4, miniBLOC
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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