sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:F-RAM (Ferroelectric RAM)
Brand:Cypress
Particular Year:24+
Package:FBGA-24
Delivery Date:New and Original
Stock: 5000pcs
The CY15B116QI-20BKXC is a low-power, 16 Mbit non-volatile memory using an advanced ferroelectric process. Ferroelectric Random Access Memory or F-RAM is a non-volatile memory with read and write capabilities similar to RAM. It provides 151 years of reliable data retention while eliminating the complexity, overhead, and system-level reliability issues associated with serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the CY15X116QI performs writes at bus speed. There is no write latency. Data is written to the memory array as soon as each byte is successfully transferred to the device. No data polling is required to start the next bus cycle. In addition, the CY15X116QI offers high write endurance compared to other non-volatile memories, and is capable of supporting 1015 read/write cycles, which is 100 million times the number of writes of an EEPROM.
Features
16-bit Ferroelectric Random Access Memory (F-RAM) Logic Structure of 2048K × 8
Virtually unlimited endurance 1000 trillion (1015) read/write cycles
151 years of data retention (see Data Retention and Endurance on page 19)
NoDelay™ Write
Advanced high-reliability ferroelectric process
Fast Serial Peripheral Interface (SPI)
Frequency up to 20 MHz
Supports SPI modes 0 (0, 0) and 3 (1, 1)
Advanced write-protection scheme
Hardware protection using Write Protect (WP) pin
Software protection using the Write-Resist (WRDI) instruction
Software block protection for 1/4, 1/2, or entire arrays
Device ID and serial number
Manufacturer ID and Product ID
Unique Device ID
Serial number
Dedicated 256-byte special sector F-RAM
Dedicated special sector write and read
Stored content can operate for up to three standard reflow cycles
Low power consumption
1.50 mA (typical) active current at 20 MHz
14 µA (typical) standby current
1.10 µA (typ) deep power-down mode current
0.1 µA (typ) Sleep mode current
1.90 mA (typical) Inrush current during power-up
Specification
Category: Memory
Packaging: Tray
Part Status: On Sale
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Capacity: 16Mb
Memory Organisation: 2M x 8
Memory interface: SPI
Clock frequency: 20 MHz
Access Time: 20 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package/Housing: 24-TBGA
Supplier Device Package: 24-FBGA (6x8)
Model
Brand
Package
Quantity
Describe
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 16Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 16Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI 50 MHz 9 ns 24-FBGA (6x8)
Cypress
8-UFLGA
5000
FRAM (Ferroelectric RAM) Memory IC 4Mb SPI - Quad I/O 108 MHz 6.7 ns 8-UFLGA (3.28x3.23)
Cypress
8-UFLGA
5000
FRAM (Ferroelectric RAM) Memory IC 8Mb SPI 20 MHz 20 ns 8-UFLGA (3.28x3.23)
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