sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:F-RAM
Brand:INFINEON
Particular Year:24+
Package:SOIC-8
Delivery Date:New and original
Stock: 5500pcs
The CY15B128Q-SXET is a 128 Kb non-volatile memory with advanced ferroelectric technology. F-RAM is non-volatile and performs read and write operations similar to RAM. It provides 121 years of reliable data retention while eliminating the complexity, overhead, and system-level reliability issues associated with serial flash memory, EEPROM, and other non-volatile memory.
Unlike serial flash memory and EEPROM, the CY15B128Q performs write operations at bus speed. No write delay occurs. After each byte is successfully transferred to the device, the data is immediately written to the memory array. Start the next bus cycle without data polling. In addition, the product offers strong write durability compared to other non-volatile memories. The CY15B128Q can support 1013 read/write cycles, which is 10 million times more write cycles than EEPROM.
Specifications of CY15B128Q-SXET:
Storage capacity: 128 kBit
Clock frequency: 33 MHz
Interface type: SPI
Operating temperature: -40 °C 125 °C
Power supply voltage: 2.7V 3.6V
Organization: 16Kb x 8
Package: SOIC-8
Model
Brand
Package
Quantity
Describe
INFINEON
SOIC-8
2000
1Mbit 3.0V 108MHz Automotive-E Ferroelectric Random Access Memory (F-RAM) IC
Cypress
FBGA-24
5000
FRAM (Ferroelectric RAM) Memory IC 16Mb SPI - Quad I/O, QPI 108 MHz 6.7 ns 24-FBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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