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CY15B116QSN-108BKXI - High-Performance 16Mb Quad SPI Serial Ferroelectric Random Access Memory (F-RAM) IC

Product Overviews

CY15B116QSN-108BKXI is a high-performance, 16-Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. The memory array is logically organized as 2,097,152 × 8 bits and is accessed using an industry-standard serial peripheral interface (SPI) bus. 

Key Features 

• 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K x 8

• SPI clock frequency

- Up to 108 MHz frequency SPI single data rate (SDR)

- Up to 46 MHz frequency SPI double data rate (DDR)

• eXecute-In-Place (XIP) for memory read/write

• Write protection, data security, and data integrity

• Hardware protection using the write protect (WP) pin

• Dedicated 256-byte special sector F-RAM

• Low-power consumption at high speed

- 14 mA (typ) active current for 108 MHz SPI SDR

- 22 mA (typ) active current for 108 MHz QSPI SDR

- 16.5 mA (typ) active current for 46 MHz QSPI DDR

- 115 µA (typ) standby current

- 1.1 µA (typ) deep power-down mode current

- 0.1 µA (typ) Hibernate mode current

• Low-voltage operation - VDD = 1.8 V to 3.6 V

• Operating temperature: –40°C to +85°C

Applications

Automotive 48 V battery management system (BMS)

Programmable logic controller (PLC)

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