sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Power Amplifier
Brand:NXP
Particular Year:24+
Package:DFN-6
Delivery Date:New and Original
Stock: 2500pcs
This 5.4W asymmetric Doherty GaN RF power amplifier is designed for mobile base station applications operating in the 3400 to 4000MHz frequency range and requiring wide instantaneous bandwidth.
The characterisation and performance of the part is suitable for applications operating in the 3400-4000MHz band. Performance cannot be guaranteed if the part is used in applications operating beyond this range.
Characteristics
High termination impedance to support excellent broadband performance
Linearised error vector magnitude using next generation signal improvements
Withstands very high output VSWR and broadband operating conditions
Suitable for less complex digital linearisation systems
Optimised for 5G base station mMIMO active antenna systems
RoHS compliant
A5G38H045NT4 Product Attributes:
Technology: GaN Si
Vds-drain-source breakdown voltage: 125 V
Operating frequency: 3.4 GHz to 4 GHz
Gain: 15.1 dB
Output power: 5.4 W
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: DFN-6
Number of Channels: 2 Channel
Series: A5G38H045N
Vgs - gate-source voltage: - 16 V
Vgs th-gate-source threshold voltage: - 2.4 V
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NXP Semiconductors was founded in 2006. Its predecessor was the semiconductor business unit of Philips, the Netherlands, which was established in 1953 and headquartered in Eindhoven, the Netherlands. NXP was listed on Nasdaq in 2010.In 2015, NXP acqui…
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