sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RF Power Amplifier
Brand:NXP
Particular Year:24+
Package:DFN-6
Delivery Date:New and Original
Stock: 1500pcs
A5G37H110NT4 This 13.5 W asymmetric Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability over the 3600 to 3800 MHz frequency range.
The device is characterized and guaranteed to perform for applications operating in the 3600 to 3800 MHz band. Performance is not guaranteed when the device is used in applications outside of these frequency ranges.
Features and benefits
• High terminal impedances for optimal broadband performance
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• Designed for low complexity linearization systems
• Optimized for massive MIMO active antenna systems for 5G base stations
Product attributes
Technology: GaN Si
Id-continuous drain current: 8.7 mA
Vds-drain-source breakdown voltage: 125 V
Operating frequency: 3.6 GHz to 3.8 GHz
Gain: 15.3 dB
Output power: 13.5 W
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: DFN-6
Number of Channels: 2 Channel
Series: A5G37H110N
Vgs - gate-source voltage: - 16 V
Vgs th-gate-source threshold voltage: - 3 V
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