sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:Power MOSFETs
Brand:Nexperia
Particular Year:24+
Package:LFPAK88
Delivery Date:New and Original
Stock: 5000pcs
The PSMN2R3-100SSEJ features extremely low RDSon and enhanced safe work area performance in a high reliability copper-clip LFPAK88 package.
The PSMN2R3-100SSEJ complements the latest ‘hot-swap’ controllers - rugged enough to withstand large inrush currents at turn-on, with low RDSon minimising I2R losses and providing optimum efficiency at full turn-on.
Product Attributes
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 100 V
Current at 25°C - Continuous Drain (Id): 255A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
On Resistance (Max) at Different Id, Vgs: 2.2 milliohms @ 25A, 10V
Vgs(th) at different Id (max): 4V @ 1mA
Gate Charge (Qg) (Max) at Vgs: 160 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 17200 pF @ 50 V
Power Dissipation (Max): 341W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK88 (SOT1235)
Applications
Hot Swap
Load switching
Soft Start
Electronic fuses
Telecom systems based on 48 V backplane/power rails
Model
Brand
Package
Quantity
Describe
INFINEON
PG-TTFN-9
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package
INFINEON
PG-TSON-8
2500
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package
INFINEON
PG-TDSON-8
2000
100V, N-Ch, 28 mΩ max, Automotive MOSFET, Dual SSO8 (5x6), OptiMOS™ 5
ST
TO-247-4
3000
N Channel 650 V, 39 mOhm typical value, 54 A MDmesh M9 power MOSFET, TO-247-4
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