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NP30N06QDK-E1-AY - 60V, 30A Dual N-Channel Power MOSFET Transistor

Product Overviews

NP30N06QDK-E1-AY is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Product Attributes

Product Category: MOSFET  

Technology: Si  

Mounting Style: SMD/SMT  

Package / Case: HSON-8  

Transistor Polarity: N-Channel  

Number of Channels: 1 Channel  

Vds - Drain-Source Breakdown Voltage: 60 V  

Id - Continuous Drain Current: 30 A  

Rds On - Drain-Source Resistance: 14 mOhms  

Vgs - Gate-Source Voltage: - 20 V, + 20 V  

Vgs th - Gate-Source Threshold Voltage: 2.5 V  

Qg - Gate Charge: 25 nC  

Maximum Operating Temperature: + 175 C  

Pd - Power Dissipation: 59 W  

Channel Mode: Enhancement 

Product Features

Super low on-state resistance RDS(on)1 = 14 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)

Low Ciss: Ciss = 1500 pF TYP. (VDS = 25 V)

Designed for automotive application and AEC-Q101 qualified

Small size package 8-pin HSON dual

Applications

Highly Integrated 100W USB-PD Charger

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