sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:RGW60TS65DHRC11
Brand:ROHM
Particular Year:24+
Package:TO-247-3
Delivery Date:New and Orignal
Stock: 1000pcs
RGW60TS65DHRC11 650V field terminated trench IGBTs feature low collector-emitter saturation voltage in a small package. They feature high speed switching, low switching losses, and a built-in very fast soft recovery FRD. The 650V field terminated trench IGBTs are ideally suited for use in solar inverters, UPS, soldering, IH, and PFC applications.
Product Properties
IGBT Type: Trench Field Cutoff
Voltage - Collector Breakdown (max): 650 V
Current - Collector (Ic) (max): 64 A
Current - collector pulse (Icm): 120 A
Vce(on) at varying Vge, Ic (max): 1.9V @ 15V, 30A
Power - Max: 178 W
Input Type: Standard
Gate Charge: 84 nC
Td (on/off) value at 25°C: 36ns/107ns
Test Conditions: 400V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr): 87 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package/Housing: TO-247-3
Supplier Device Package: TO-247N
Applications
● Solar inverters
● UPS
● Welding
● IH
● Power Factor Correction
Model
Brand
Package
Quantity
Describe
ROHM
TO-247-3
1000
IGBT with fluted cut-off field 1200 V 50 A 395 W through-hole TO-247N
INFINEON
TO-247-4
1000
IGBT Grooved Field Cutoff 650 V 74 A 250 W Through Hole PG-TO247-4-3
ROHM
TO-247-3
1000
IGBT Trench Type Field Cutoff 650 V 96 A 254 W Through Hole TO-247N
INFINEON
PG-TO247-3
1000
IGBT Grooved field cut-off 650 V 80 A 333 W Through-hole PG-TO247-3
ROHM
TO-3PFM
1000
IGBT Trench Type Field Cutoff 650 V 45 A 94 W Through Hole TO-3PFM
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ROHM Co., Ltd. is one of the worlds leading semiconductor manufacturers, headquartered in Kyoto, Japan, ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components have a place in the rapidly cha…
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