sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:SCT025W120G3-4AG
Brand:ST
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 1000pcs
The SCT025W120G3-4AG Silicon Carbide power MOSFET devices have been developed using ST's advanced and innovative third-generation SiC MOSFET technology. The devices offer extremely low RDS(on) over the entire temperature range, as well as low capacitance and very high switching operation performance, resulting in improved application performance in terms of frequency, energy efficiency, system size and weight reduction.
Product Characteristics
Transistor Type: N-Channel Transistor
Technology: SiC (Silicon Carbide Junction Transistor)
Drain-to-source voltage (Vdss): 1200 В
Current at 25°C - Continuous Drain (Id); 56A (Tc)
Supply Voltage (Max Rds On, Min Rds On): 15V, 18V 15V, 18V
On Resistance (Max) at Different Id, Vgs: 37mOhm @ 25A, 18V
Vgs(th) at different Id (max): 4.2V @ 5mA
Gate charge (Qg) at Vgs (max): 73 nK @ 18V 73 nK @ 18V
Vgs (max): +18V, -5V
Input capacitance (Ciss) at various Vds (max): 1990 pF @ 800 V
Power Dissipation (Max): 388 W (Tc 388 W (Tc))
Operating Temperature: -55°C ~ 200°C (TJ)
Grade: Automotive Grade
Certification: AEC-Q101
Mounting Type: Through Hole
Package: TO-247-4
Package/Housing: TO-247-4
Applications
● Main inverter (electric traction)
● DC/DC converters for electric/hybrid vehicles
● On-board chargers (OBC)
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