sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NXH350N100H4Q2F2P1G-R
Brand:ON
Particular Year:23+
Package:Q2PACK-42
Delivery Date:New and Original
Stock: 1000pcs
The NXH350N100H4Q2F2P1G-R is a power integrated module (PIM) containing a Type I NPC stage with a 100 A, 1200 V EliteSiC diode for the neutral clamp, a 350 A, 1000 V IGBT for the outer IGBT, and a 400 A, 1000 V IGBT for the inner IGBT. The specified switching current of the reverse diode for the IGBT is 170 A. An on-board thermistor is included. The reverse diode for the IGBT is specified to switch at 170 A. An on-board thermistor is included.
Features
● Very high efficiency trench with field cut-off technology
● Low switching losses reduce system power consumption
● Modular design provides high power density
● Low inductance layout
● Low package height
● The devices are lead-free, halogen-free/brominated flame retardant-free, and RoHS compliant.
Applications
● Solar inverters
● Uninterruptible power supply systems
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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