sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GaN Transistor
Brand:NXP
Particular Year:25+
Package:OM-780-4S4S-8
Delivery Date:New and original
Stock: 2000pcs
The A5G07H800W19NR3 is a GaN field-effect transistor launched by NXP, specifically designed for RF power amplification in the 717-850 MHz frequency band. It features high efficiency, high reliability, and compact packaging. The following are its key features:
High terminal impedance, supporting excellent broadband performance
Advanced high-performance internal packaging Doherty
Improve the amplitude of the linearized error vector by using the new generation of signals
It can withstand extremely high output VSWR and broadband operating conditions
Plastic encapsulation
Compliant with RoHS standards
Main specifications
Vds- Drain-source breakdown voltage: 125 V
Minimum operating temperature: -55 ° C
Maximum operating temperature: + 150 ° C
Installation style: SMD/SMT
Packaging/Cabinet: OM-780-4S4S-8
Maximum operating frequency: 850 MHz
Minimum operating frequency: 717 MHz
Humidity sensitivity: Yes
Output power: 112 W
Packaging: Reel
Product type: GaN FETs
Application scenarios of A5G07H800W19NR3
This 112W asymmetric Doherty GaN RF power transistor is specifically designed for mobile communication base station applications with frequencies ranging from 717 to 850MHz and requiring wide instantaneous bandwidth.
Model
Brand
Package
Quantity
Describe
INFINEON
PG-DSO-20
2000
CoolGaN™ Power Transistor 650V G5 for ultimate efficiency, power density and reliability
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