sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IMW120R040M1H
Data Manual:IMW120R040M1H.pdf
Brand:INFINEON
Particular Year:21+
Package:TO-247-3
Delivery Date:New and Original
Stock: 240pcs
The IMW120R040M1H 1200 V 40mΩ CoolSiCTM SiC MOSFET in TO247-3 package is based on an advanced trench process optimized for performance and reliability. Compared with traditional silicon (Si)-based devices such as IGBTs and MOSFETs, SiC MOSFETs offer many advantages, such as the lowest gate charge and device capacitance in 1200 V switching devices, no reverse recovery losses in the body diode, and turn-off losses are affected by temperature. Turn-on characteristics with little influence and no knee voltage. Therefore, CoolSiC™ SiC MOSFETs are ideal for hard switching and resonant switching topologies such as power factor correction (PFC) circuits, bidirectional topologies, and DC-DC converters or DC-AC inverters.
Feature description
Outstanding switching and conduction losses
High threshold voltage, Vth > 4 V
0V turn-off gate voltage for simple gate drive
Wide gate-source voltage range
Robust low loss body diode for hard switching
Turn-off losses are less affected by temperature
.XT diffusion welding technology for best-in-class thermal performance
Advantage
highest efficiency
Reduce cooling work
higher frequency operation
Increase power density
Reduce system complexity
Application field
Uninterruptible Power Supply (UPS)
battery formation
Electric vehicle fast charging
Motor Control and Drive
Solar System Solutions
Model
Brand
Package
Quantity
Describe
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ
INFINEON
PG-HDSOP-22
2000
CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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