sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPT60R065S7
Data Manual:IPT60R065S7.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-HSOF-8-2
Delivery Date:New and Original
Stock: 1000pcs
The IPT60R065S7 power MOSFET offers the best price/performance ratio for low-frequency switching applications.The CoolMOS S7 has the lowest RDS(on) value of any HV SJ MOSFET and is significantly more efficient.The CoolMOS S7 is optimised for "static switching" and high current applications. It is ideally suited for use in solid state relays, circuit breaker designs, and line rectification for SMPS and inverter topologies.
Product Attributes
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 600 V
Current at 25°C - Continuous Drain (Id): 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
On Resistance (Max) at Different Id, Vgs: 65 mOhm @ 8A, 12V
Vgs(th) at different Id (max): 4.5V @ 490µA
Gate Charge (Qg) at Vgs (max): 51 nC @ 12 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 1932 pF @ 300 V
Power Dissipation (Max): 167W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-2
Package/Housing: 8-PowerSFN
Applications
● Solid state relays and circuit breakers
● Line rectification in high power/high performance applications (computing, telecom, UPS, and solar)
● Diode bridge shunt/replacement for line rectification in high power/high performance applications (computing, telecom, UPS, and solar)
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