sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPW60R099C7
Data Manual:IPW60R099C7.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-TO247-3
Delivery Date:New and Original
Stock: 1000pcs
The IPW60R099C7 power MOSFETs mark a revolutionary advancement in technology by enabling low RDS(on)/package and, due to their low switching losses, improved efficiency across the entire load range.The C7 series is optimised for use in hard-switching topologies (such as Power Factor Correction (CCM PFC), Dual Transistor Forward Excitation (TTF), and Solar Boost) for applications such as Solar, Servers, Telecom, and UPS. TTF) and solar boost). The devices feature a 650V breakdown voltage, making them suitable for use in solar and switched-mode power supply (SMPS) PFC stages where additional safety margins are required.
Product Characteristics
Transistor Type: N-Channel Transistor
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 В
Current at 25°C - Continuous Drain (Id): 14 A (Tc)
Supply Voltage (Max Rds On, Min Rds On): 10 Ω: 10 В
Switching Resistance at Different Id, Vgs (Max): 99 mOhm, 9.7 A, 10 V
Vgs(th) at different Id (max): 4 V @ 490 µA
Gate charge (Qg) at different Vgs (max): 42 nK at 10 V
Vgs (max): ±20 V
Input capacitance (Ciss) at different Vds (max): 1819 pF @ 400 V
Power Dissipation (Max): 110 W (Tc): 110 W (Tc).
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting type: Through-hole
Scope of delivery: PG-TO247-3
Packaging / Case: TO-247-3
Applications
● For high power/high performance PFC and PWM stages (TTF, LLCSMPS, e.g. computers, servers, telecom, UPS and solar)
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