sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPW60R037CSFD
Data Manual:IPW60R037CSFD.pdf
Brand:INFINEON
Particular Year:23+
Package:PG-TO247-3
Delivery Date:New and Original
Stock: 1000pcs
The IPW60R037CSFD is an optimised device designed specifically for the off-board EV charging market segment. In addition, it is equipped with an integrated cell body diode and a significantly reduced reverse recovery charge (Qrr), resulting in the highest reliability in resonant topologies. These features fulfil the efficiency and reliability criteria for on-board electronic ballasts and it also supports high power density solutions.
Product Characteristics
Transistor Type: N-Channel Transistor
Technology: MOSFET (Metal Oxide)
Drain-to-source voltage (Vdss): 600 В
Current at 25°C - Continuous Drain (Id): 54A (Tc)
Supply Voltage (Max Rds On, Min Rds On): 10 Ω: 10 В
Switching Resistance (Max) at Various Id, Vgs: 37 milliohms @ 32.6A, 10V
Vgs(th) at various Id (max): 4.5V @ 1.63mA
Gate charge (Qg) at different Vgs (max): 136 nK @ 10V
Vgs (max): ±20 V
Input capacitance (Ciss) at different Vds (max): 5623 pF @ 400 V 5623 pF @ 400 V
Power Dissipation (Max): 245 W (Tc): 245 W (Tc).
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Power Supply Included: PG-TO247-3
Package/Housing: TO-247-3
Applications
● Suitable for soft and hard switching topologies
● Optimised for phase shifted full bridge (ZVS), LLC & PFCA applications - EV charging
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