Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

sales@hkmjd.com

英banner
Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

Product Classification

AI Processor Chip

Resistor network

For picture reference, please see the specifications
< >

Commodity Model:IMZA120R007M1H

Trade Name:IMZA120R007M1H

Data Manual:IMZA120R007M1H.pdf

Brand:INFINEON

Particular Year:23+

Package:TO-247-4

Delivery Date:New and Original

Stock: 3000pcs

Quantity:
Online Inquiry

Contacts:

E-Mail:

Contact Number:

Corporate Name:

Product Parameters

Manufacturer
INFINEON
Model
IMZA120R007M1H
Package
TO-247-4
Describe
1200V 7mΩ CoolSiC™ Trench Silicon Carbide MOSFET in TO247-4 Package

Product Description

The IMZA120R007M1H 1200 V 7mΩ CoolSiCTM Silicon Carbide MOSFET in a TO247-4 package is based on a state-of-the-art trench process that has been optimised for both performance and reliability. SiC MOSFETs offer a number of advantages over traditional silicon (Si)-based devices such as IGBTs and MOSFETs, such as the lowest gate charge and device capacitance in a 1200 V switching device, no reverse recovery loss in the body diode, low temperature dependence of the turn-off loss, and on-state characteristics with no inflection voltage. CoolSiC™ Silicon Carbide MOSFETs are therefore ideally suited for hard-switching and resonant switching topologies such as power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters.


Infineon's SiC MOSFETs in the TO247-4 package reduce the source parasitic inductance effect on the gate circuit, resulting in faster switching speeds and higher efficiency.


Product Attributes

FET Type: N-Channel  

Technology: SiCFET (Silicon Carbide)  

Drain-Source Voltage (Vdss): 1200 V  

Current at 25°C - Continuous Drain (Id): 225A (Tc)  

Drive Voltage (Max Rds On, Min Rds On): 15V, 18V  

On Resistance (Max) at Different Id, Vgs: 9.9 mOhm @ 108A, 18V  

Vgs(th) at different Id (max): 5.2V @ 47mA  

Gate Charge (Qg) at Vgs (max): 220 nC @ 18 V  

Vgs (max): +20V, -5V  

Input capacitance (Ciss) at different Vds (max): 9170 nF @ 25 V  

Power Dissipation (Max): 750W (Tc)  

Operating Temperature: -55°C ~ 175°C (TJ)  

Mounting Type: Through Hole  

Supplier Device Package: PG-TO247-4-8  

Package/Housing: TO-247-4


Areas of application

Uninterruptible Power Supply (UPS)

Battery Formation

Fast charging of electric vehicles

Motor Control and Drive

Solar System Solutions

Associated Products

Model

Brand

Package

Quantity

Describe

IMZ120R060M1H

INFINEON

TO-247-4

3000

1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4

G2R1000MT33J

Navitas

TO-263-7

3000

3300 V silicon carbide power MOSFET transistor

LSIC1MO120G0025

Littelfuse

TO-247-4

2000

1200 V silicon carbide power MOSFET transistor

NTBL023N065M3S

ON

H-PSOF-8

2000

650 V silicon carbide power MOSFET transistor

MSC080SMA120SA

Microchip

TO-263-7

2000

1200 V silicon carbide power MOSFET transistor

MSC060SMA070SA

Microchip

TO-263-7

2000

700 V silicon carbide power MOSFET transistor

MSC040SMA120SD

Microchip

D3PAK-3

2000

1200 V silicon carbide power MOSFET transistor

MSC035SMA070SC

Microchip

D3PAK-3

2000

700 V silicon carbide power MOSFET transistor

IXSH80N120L2KHV

IXYS

TO-247-4L

2000

1200 V silicon carbide power MOSFET transistor

IXSH40N120L2KHV

IXYS

TO-247-4L

2000

1200 V silicon carbide power MOSFET transistor

FAQ

  • 1.Is the inventory and price seen on the platform accurate?

    A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.

  • 2.Are all our products genuine?

    A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.

  • 3.Can you provide the qualification certificate of the original factory or agent?

    A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.

  • 4.Can I make an inquiry through the company's website?

    A: You can inquire through the website, or by phone and email.

  • 5.When can I deliver the goods after placing an order? How long will it take to get there?

    A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.

  • 6.Can the company issue an invoice?

    A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.

INFINEON

INFINEON

Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…

Company Introduction
About Us
News Information
Honorary Qualification
Inventory Query
Classification Query
Supplier Query
Help Center
Online Inquiry
Common Problem
Site Map
Contact us

Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

CopyRight ©2022 Copyright belongs to Mingjiada   Yue ICP Bei No. 05062024-12

Official QR Code

Brand Index:

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

Links:

skype:mjdsaler