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Service Telephone:86-755-83294757
Trade Name:IMZA120R007M1H
Data Manual:IMZA120R007M1H.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 3000pcs
The IMZA120R007M1H 1200 V 7mΩ CoolSiCTM Silicon Carbide MOSFET in a TO247-4 package is based on a state-of-the-art trench process that has been optimised for both performance and reliability. SiC MOSFETs offer a number of advantages over traditional silicon (Si)-based devices such as IGBTs and MOSFETs, such as the lowest gate charge and device capacitance in a 1200 V switching device, no reverse recovery loss in the body diode, low temperature dependence of the turn-off loss, and on-state characteristics with no inflection voltage. CoolSiC™ Silicon Carbide MOSFETs are therefore ideally suited for hard-switching and resonant switching topologies such as power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters.
Infineon's SiC MOSFETs in the TO247-4 package reduce the source parasitic inductance effect on the gate circuit, resulting in faster switching speeds and higher efficiency.
Product Attributes
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
On Resistance (Max) at Different Id, Vgs: 9.9 mOhm @ 108A, 18V
Vgs(th) at different Id (max): 5.2V @ 47mA
Gate Charge (Qg) at Vgs (max): 220 nC @ 18 V
Vgs (max): +20V, -5V
Input capacitance (Ciss) at different Vds (max): 9170 nF @ 25 V
Power Dissipation (Max): 750W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-8
Package/Housing: TO-247-4
Areas of application
Uninterruptible Power Supply (UPS)
Battery Formation
Fast charging of electric vehicles
Motor Control and Drive
Solar System Solutions
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-3
2000
Through-hole N-channel 650 V 26A (Tc) 96W (Tc) PG-TO247-3-41
INFINEON
TO-247-3
1000
1200V 14mΩ CoolSiC™ trench-type silicon carbide MOSFETs in TO247-3 package
INFINEON
TO-247PLUS-4-HCC
1000
1200 V CoolSiC™ trench-type silicon carbide MOSFETs in TO247-4 package
INFINEON
TO-247PLUS-4-HCC
1000
1200 V CoolSiC™ trench-type silicon carbide MOSFETs in TO247-4 package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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