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Service Telephone:86-755-83294757
Trade Name:IMZA120R007M1H
Data Manual:IMZA120R007M1H.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-4
Delivery Date:New and Original
Stock: 3000pcs
The IMZA120R007M1H 1200 V 7mΩ CoolSiCTM Silicon Carbide MOSFET in a TO247-4 package is based on a state-of-the-art trench process that has been optimised for both performance and reliability. SiC MOSFETs offer a number of advantages over traditional silicon (Si)-based devices such as IGBTs and MOSFETs, such as the lowest gate charge and device capacitance in a 1200 V switching device, no reverse recovery loss in the body diode, low temperature dependence of the turn-off loss, and on-state characteristics with no inflection voltage. CoolSiC™ Silicon Carbide MOSFETs are therefore ideally suited for hard-switching and resonant switching topologies such as power factor correction (PFC) circuits, bi-directional topologies, and DC-DC converters or DC-AC inverters.
Infineon's SiC MOSFETs in the TO247-4 package reduce the source parasitic inductance effect on the gate circuit, resulting in faster switching speeds and higher efficiency.
Product Attributes
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 225A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
On Resistance (Max) at Different Id, Vgs: 9.9 mOhm @ 108A, 18V
Vgs(th) at different Id (max): 5.2V @ 47mA
Gate Charge (Qg) at Vgs (max): 220 nC @ 18 V
Vgs (max): +20V, -5V
Input capacitance (Ciss) at different Vds (max): 9170 nF @ 25 V
Power Dissipation (Max): 750W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-8
Package/Housing: TO-247-4
Areas of application
Uninterruptible Power Supply (UPS)
Battery Formation
Fast charging of electric vehicles
Motor Control and Drive
Solar System Solutions
Model
Brand
Package
Quantity
Describe
INFINEON
TO-247-4
3000
1200V, 60mΩ, CoolSiC™ Silicon Carbide MOSFET Transistor, TO-247-4
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