sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:NVBG070N120M3S
Data Manual:NVBG070N120M3S.pdf
Brand:ON
Particular Year:23+
Package:D2PAK-7L
Delivery Date:New and Original
Stock: 1000pcs
The NVBG070N120M3S Silicon Carbide (SIC) MOSFETs are 1200V M3S planar EliteSiC MOSFETs designed for fast switching applications.The MOSFETs provide optimum performance when driven by an 18V gate driver, but can also be used with a 15V gate driver. It features an ultra-low gate charge of 57nC, high-speed switching of 57pF (low capacitance), and a typical drain-source on-resistance of 65mΩ (at VGS=18V).
Characteristics
● Typical RDS(on) = 65 m @ VGS = 18 V
● Ultra-low gate charge (QG(tot) = 57 nC)
● High-speed switching, low capacitance (Coss = 57 pF)
● 100% avalanche tested
● AEC-Q101 certified and PPAP approved
● This device is halide-free and RoHS 7a exempt,
● Pb-free 2LI (on layer 2 interconnect)
Applications
● Automotive on-board chargers
● Automotive DC/DC converters for electric/hybrid vehicles
Model
Brand
Package
Quantity
Describe
INFINEON
TO-220-3
3000
600V CoolMOS™ P7 Superjunction (SJ) MOSFET -- N-Channel Power MOSFET Transistor
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ON Semiconductor (Nasdaq: ON) is the premier supplier of high-performance silicon solutions for energy-efficient electronics. The companys product portfolio includes power and signal management, logic, discrete and custom devices to help customers sol…
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