sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AIKQ120N60CT
Data Manual:AIKQ120N60CT.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
AIKQ120N60CT Discrete IGBTs for 600V automotive applications TRENCHSTOP™ and field termination technology provide very tight parameter distributions, high durability, temperature stability and very high switching speeds.
Feature Description
Very low V Cesat, value of 1.5V (typical)
Maximum junction temperature of 175°C
Short-circuit withstand time 5µs
Positive temperature coefficient of VCEsat
Low EMI
Low gate charge
Environmentally friendly package
Very soft, fast recovery anti-parallel emitter control high efficiency diodes
Potential Applications
Mains inverters
Air conditioning compressors
PTC heaters
Motor drives
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
2000
Insulated gate bipolar transistor (IGBT) FS7 1200V 25A SCR IGBT TO247 4L
ON
TO-247-4
2000
Insulated Gate bipolar Transistor (IGBT) FS7 1200V 25A SCR IGBT STAND ALONE TO247 4L
ST
HU3PAK-7
2000
650 V, 30 A automotive-grade grooved grid field cut-off low-loss M series IGBT
INFINEON
Module
3000
HybridPACK™ Drive G2 CoolSiC™ - Compact 1200V/310A B6 Bridge Power Module
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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