sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AIKQ200N75CP2
Data Manual:AIKQ200N75CP2.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
Automotive IGBT Discretes The AIKQ200N75CP2 is an EDT2 IGBT in a TO247PLUS package with a co-packed diode. 750V EDT technology enables battery voltages of up to 470V and safe, fast switching with increased overvoltage margins, which dramatically improves energy efficiency and cooling in high-voltage automotive applications. The result is a high-performance inverter system.
EDT2 technology has an extremely compact parameter distribution and a positive thermal coefficient. This makes parallel operation very easy, thus providing system flexibility and power scalability.
The AIKQ200N75CP2 is rated at 200 A and is a best-in-class discrete IGBT in the TO247PLUS package, a feature that reduces the number of devices in parallel required to achieve a given power level, thereby increasing power density and reducing overall system cost.
Feature Description
VCE = 750 V
750 V collector-emitter blocking voltage capability
Smooth switching characteristics
Very low VCE (saturation), 1.30 V at ICnom = 200 A
Short circuit robustness
Very tight parameter distribution
Low gate charge QG
Co-packaged with fast soft recovery Emitter controlled 3 diode
AEC-Q101 compliant
Increased overvoltage margins in applications
Reduced number of parallel devices required
Simple gate drive design
Self-limiting under short-circuit conditions
Low EMI signal
High reliability and long operating life
Potential Applications
Traction inverters
DC link discharge switches
Auxiliary inverters
Model
Brand
Package
Quantity
Describe
ON
TO-247-4
2000
Insulated gate bipolar transistor (IGBT) FS7 1200V 25A SCR IGBT TO247 4L
ON
TO-247-4
2000
Insulated Gate bipolar Transistor (IGBT) FS7 1200V 25A SCR IGBT STAND ALONE TO247 4L
ST
HU3PAK-7
2000
650 V, 30 A automotive-grade grooved grid field cut-off low-loss M series IGBT
INFINEON
Module
3000
HybridPACK™ Drive G2 CoolSiC™ - Compact 1200V/310A B6 Bridge Power Module
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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