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Supply INFINEON Product:IGBT Transistors,MOSFETs Transistor,GaN Transistors

Supply INFINEON Product:IGBT Transistors,MOSFETs Transistor,GaN Transistors

Source:our siteTime:2024-12-04Views:

Supply INFINEON Product:IGBT Transistors,MOSFETs Transistor,GaN TransistorsShenzhen Mingjiada Electronics Co., Ltd. specialises in electronic components sales, we offer a wide selection of products, accurate supply chain management, and comprehensive …

Supply INFINEON Product:IGBT Transistors,MOSFETs Transistor,GaN Transistors


Shenzhen Mingjiada Electronics Co., Ltd. specialises in electronic components sales, we offer a wide selection of products, accurate supply chain management, and comprehensive technical support. Our company is committed to providing customers with efficient, convenient and high-quality electronic components purchasing experience.



IGBT Transistors — market leadership through groundbreaking innovation and application focus


Striving for the highest standards in performance and quality, Infineon offers a comprehensive discrete IGBT portfolio that is second to none. New products are application-specific developed to achieve the highest value.


From 600V up to 1600V, we offer a wide range of IGBT voltage classes to meet different voltage requirements in each application. Our discrete IGBT package portfolio contains SMD (Surface Mount Device) packages, for example, D²PAK, DPAK, SOT-223, and through-hole packages, for example, TO220, TO220FP, TO247, TO247-4, TO247PLUS, TO-247PLUS-4 and TO247 Advanced Isolation packages.


Discrete IGBTs solutions with and without anti-parallel diode, which is an excellent fit to use in industrial, home appliance and automotive applications.


MOSFETs Transistor — OptiMOS™, StrongIRFET™, and CoolMOS™, low, medium and high voltage power MOSFETs for low-, medium-, and high-power applications


An N-channel MOSFET uses electrons to create a current channel. This allows electrons to move quickly and easily through the current when the MOSFET is activated and switched on. Because of the specific characteristics of N-channel MOSFETs, the mobility of the carriers is approximately two to three times higher than that of a P-channel for the same RDS(on) value, and the P-channel chip must be two to three times the size of the N-channel. For this reason, using MOSFET transistor N-channels for high current applications is often the preferred choice.


GaN Transistors — discrete and integrated solutions delivering highest efficiency and power density in consumer, industrial, and automotive applications


Infineon’s GaN transistors are highly efficient for power conversion in the voltage range of up to 700 V. Our GaN devices have fast turn-on/-off speed, minimum switching losses, and a large variety of package options, enabling simple and fast time-to-market. They are qualified to extensive criterion, exceeding industry standards. GaN technology significantly enhances overall system performance with minimized system cost and increased ease of use.

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