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[Supply, Recycle] MMA043PP4 (Microchip) GaAs pHEMT MMIC Wideband Low-Noise Amplifier
Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] MMA043PP4 (Microchip) GaAs pHEMT MMIC Wideband Low-Noise AmplifierOverviews:MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband am…
Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] MMA043PP4 (Microchip) GaAs pHEMT MMIC Wideband Low-Noise Amplifier
Overviews:
MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a leadless 4mm × 4mm surface-mount package that operates between 0.5GHz and 12GHz.
The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 Ω.
The following are key features of the MMA043PP4 device:
GaAs pHEMT LNA monolithic microwave integrated circuit (MMIC)
Low-noise figure: 1.5 dB from 0.5 GHz to 6 GHz
High gain: 16 dB
Broadband performance: 0.5 GHz–12 GHz
Excellent P1dB output power: 17 dBm
High OIP3: 28 dBm
50 Ω matched input/output
Compact 24-lead 4 mm × 4 mm × 1.2 mm QFN package
The MMA043PP4 device is designed for the following applications:
Test instrumentation
Wideband communications
Wireless infrastructure
Wideband microwave radios
MMA043PP4 - Application Circuit Schematic:
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Time:2025-01-22
Time:2025-01-22
Time:2025-01-22
Time:2025-01-22
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