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[Supply, Recycle] MMA043PP4 (Microchip) GaAs pHEMT MMIC Wideband Low-Noise Amplifier

[Supply, Recycle] MMA043PP4 (Microchip) GaAs pHEMT MMIC Wideband Low-Noise Amplifier

Source:our siteTime:2024-11-29Views:

Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] MMA043PP4 (Microchip) GaAs pHEMT MMIC Wideband Low-Noise AmplifierOverviews:MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband am…

Shenzhen Mingjiada Electronics Co., Ltd. [Supply, Recycle] MMA043PP4 (Microchip) GaAs pHEMT MMIC Wideband Low-Noise Amplifier


Overviews:

MMA043PP4 is a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) low-noise wideband amplifier in a leadless 4mm × 4mm surface-mount package that operates between 0.5GHz and 12GHz. 

The MMA043PP4 amplifier provides 16 dB of gain, 2.0 dB noise figure, and 28 dBm output IP3 and 17 dBm output P1dB while drawing only 55 mA of current from a 5 V supply. P1dB output power of +17 dBm enables the LNA to function as an LO driver for balanced, I/Q, or image reject mixers. The RF ports are internally matched to 50 Ω.


The following are key features of the MMA043PP4 device:

GaAs pHEMT LNA monolithic microwave integrated circuit (MMIC)

Low-noise figure: 1.5 dB from 0.5 GHz to 6 GHz

High gain: 16 dB

Broadband performance: 0.5 GHz–12 GHz

Excellent P1dB output power: 17 dBm

High OIP3: 28 dBm

50 Ω matched input/output

Compact 24-lead 4 mm × 4 mm × 1.2 mm QFN package


The MMA043PP4 device is designed for the following applications:

Test instrumentation

Wideband communications

Wireless infrastructure

Wideband microwave radios


MMA043PP4 - Application Circuit Schematic:

2图.jpg

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