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Shenzhen Mingjiada Electronics Co., Ltd. introduces the Infineon IMDQ75R008M1H a 750V CoolSiC™ power MOSFET transistor, a highly rugged SiC MOSFET with optimal system performance and reliability.

Some key features and benefits of the IMDQ75R008M1H silicon carbide MOSFET monotube:

Highly stable 750V technology: This MOSFET utilizes Infineon's CoolSiC™ technology to provide a stable 750V operating voltage.

Best-in-class RDS(on) x Qfr: The IMDQ75R008M1H offers best-in-class performance in terms of the product of on-resistance and gate charge.

Outstanding Ron x Qoss and Ron x QG: Excellent performance in the product of on-resistance and output charge and gate charge.

Low Crss/Ciss and high Vgsth: with low reverse transfer capacitance and high threshold voltage.

100% avalanche tested: ensures high device reliability.

XT interconnect technology: Best-in-class thermal performance with Infineon's .

State-of-the-art top-cooled package: Provides efficient heat dissipation.

Excellent hard-switching efficiency: Achieves high efficiency in hard-switching applications.

Enables Higher Switching Frequencies: Allows operation at higher frequencies, reducing system size and increasing power density.

Higher Reliability: Provides higher reliability and longer life.

Withstand bus voltages in excess of 500V: Capable of withstanding higher bus voltages.

Robust to parasitic turns: Provides robust performance to parasitic turns.

Unipolar drive: Simplifies the design of the drive circuit.

Best-in-class thermal dissipation: Excellent performance in thermal dissipation.

Application areas for the IMDQ75R008M1H include solid-state relays (SSRs), single-phase string inverter solutions, AC-DC power conversion for telecom infrastructures, energy storage systems, electric vehicle charging, and server power supplies. This silicon carbide MOSFET monotube plays an important role in a variety of demanding power electronics applications with its energy-efficient features and optimal reliability.

IMDQ75R008M1H Parameters:

ID (@25°C) Max: 173 A

Minimum and maximum operating temperature: -55 °C 175 °C

Package: Q-DPAK

Polarity: N

Approvals: Industrial

RDS (on) (@ Tj = 25°C): 7.8 mΩ

Technology: CoolSiC™ G1

Maximum VDS: 750 V

Company website: www.hkmjd.com