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【SK hynix Memory IC】HMAA8GR7CJR4N-XN:Low Power High-Speed Registered DDR4 SDRAM DIMMs

【SK hynix Memory IC】HMAA8GR7CJR4N-XN:Low Power High-Speed Registered DDR4 SDRAM DIMMs

Source:our siteTime:2024-11-04Views:

【SK hynix Memory IC】HMAA8GR7CJR4N-XN:Low Power High-Speed Registered DDR4 SDRAM DIMMsHMAA8GR7CJR4N-XN Registered DDR4 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) is low power, high-speed operation memory m…

【SK hynix Memory IC】HMAA8GR7CJR4N-XN:Low Power High-Speed Registered DDR4 SDRAM DIMMs


HMAA8GR7CJR4N-XN Registered DDR4 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) is low power, high-speed operation memory modules that use DDR4 SDRAM devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems such as servers and workstations.


Specifications of HMAA8GR7CJR4N-XN

Memory Capacity:64GB

Memory Technology:DDR4 SDRAM

Product Voltage:1.2V

RAM Speed:3200 MHz

RAM Standard:DDR4-3200/PC4-25600

Error Identifying:ECC

Signal Type:Registered

Column Access Strobe (CAS):CL22

Rank:Dual Rank x4

Quantity of Pins:288-pin

RAM Genre:RDIMM


Feature of HMAA8GR7CJR4N-XN

Power Supply: VDD=1.2V (1.14V to 1.26V)

VDDQ= 1.2V (1.14V to 1.26V)

VPP- 2.5V (2.375V to 2.75V)

VDDSPD=2.25V to 2.75V

16 internal banks

Data transfer rates: PC4-3200, PC4-2933, 2666, PC4-2400, PC4-2133, PC4-1866, PC4- 1600

Bi-Directional Differential Data Strobe

8 bit pre-fetch

Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

Supports ECC error correction and detection

On-Die Termination (ODT)

Temperature sensor with integrated SPD

Per DRAM Addressability is supported

Internal Vref DQ level generation is available

Write CRC is supported at all speed grades

DBI (Data Bus Inversion) is supported(x8)

CA parity (Command/Address Parity) mode is supported


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