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QPA4446D A 4 W GaN Power Amplifier Chip (37.5-42.5 GHz)

QPA4446D A 4 W GaN Power Amplifier Chip (37.5-42.5 GHz)

Source:our siteTime:2024-10-30Views:

The Qorvo QPA4446D is a high power MMIC amplifier manufactured using the 0.15 um GaN on SiC process (QGaN15) produced by Qorvo. It targets the Q-V band of satellite communications at 37.5-42.5 GHz. The QPA4446D achieves 2 W linear power, a third-order…

The Qorvo QPA4446D is a high power MMIC amplifier manufactured using the 0.15 um GaN on SiC process (QGaN15) produced by Qorvo. It targets the Q-V band of satellite communications at 37.5-42.5 GHz. The QPA4446D achieves 2 W linear power, a third-order cross-modulation distortion product of 25 dBc, and a small signal gain of 18 dB. It provides 4 W of saturated output power while achieving 25% power additional efficiency.


To simplify system integration, the QPA4446D is fully matched to 50 ohms, with DC blocking capacitors integrated on both I/O ports. Its RF input port is coupled to ground via DC for optimal ESD performance.


The QPA4446D is ideal for communications and radar applications supporting the commercial and military markets.


Functional block diagram:

框图.png

Applications:

• Satellite communication


Key performance:

Frequency range: 37.5-42.5GHz

PSAT (PIN = 22 dBm): 36 dBm

PAE(pin = 22 dBm): 25%

IMD3 (POUT/TONE = 30 dBm): -25 dBc

Small signal gain :18 dB

Bias :VD = 24 V, IDQ = 70 mA, VG = -2.3 V Typical range

Dimensions :3.26 x 1.49 x 0.05mm


(Supply, return) Qorvo QPA2640D 8 W GaN Power Amplifier Return to
column Company (Recycled) QPC1031D High Power SPST Reflective Switch-Qorvo

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