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Service Telephone:86-755-83294757
Product Description:The Qorvo QPD1035 GaN RF power transistor is a 40W discrete silicon carbide gallium nitride HEMT, operating in the frequency range from DC to 6GHz, operating on a 50V power supply.The QPD1035 transistor has input prematching, makin…
Product Description:
The Qorvo QPD1035 GaN RF power transistor is a 40W discrete silicon carbide gallium nitride HEMT, operating in the frequency range from DC to 6GHz, operating on a 50V power supply.
The QPD1035 transistor has input prematching, making it ideal for use in wideband amplifiers in pulse and continuous wave operations. These devices are lead free and RoHS compliant.
Main features:
Operating frequency range: DC to 6GHz
Operating voltage: 50V
Output power (P3dB) = 50W
Drain efficiency (P3dB) = 52.2%
Linear gain = 15.1dB
Low thermal resistance package
Package drawing
QPD1035 application:
Military radar
Civil radar
Professional radio and military radio communications
Testing instrument
Broadband or narrow band amplifier
Jammer transmitter
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Time:2024-11-16
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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