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DC to 6 GHz, QPD1035 GaN RF Power Transistor-Qorvo

DC to 6 GHz, QPD1035 GaN RF Power Transistor-Qorvo

Source:our siteTime:2024-10-28Views:

Product Description:The Qorvo QPD1035 GaN RF power transistor is a 40W discrete silicon carbide gallium nitride HEMT, operating in the frequency range from DC to 6GHz, operating on a 50V power supply.The QPD1035 transistor has input prematching, makin…

Product Description:

The Qorvo QPD1035 GaN RF power transistor is a 40W discrete silicon carbide gallium nitride HEMT, operating in the frequency range from DC to 6GHz, operating on a 50V power supply.


The QPD1035 transistor has input prematching, making it ideal for use in wideband amplifiers in pulse and continuous wave operations. These devices are lead free and RoHS compliant.


Main features:

Operating frequency range: DC to 6GHz

Operating voltage: 50V

Output power (P3dB) = 50W

Drain efficiency (P3dB) = 52.2%

Linear gain = 15.1dB

Low thermal resistance package


Package drawing

封装.png

QPD1035 application:

Military radar

Civil radar

Professional radio and military radio communications

Testing instrument

Broadband or narrow band amplifier

Jammer transmitter


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