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Infineon Introduces CoolGaN™ Transistor GS-065-018-2-L-MR: Extremely High Efficiency and Reliability
Shenzhen Mingjiada Electronics Co., Ltd [Supply] Infineon GS-065-018-2-L-MR CoolGaN™ Transistors 650 V ≤ G3 with very high efficiency and reliability.Overview:The GS-065-018-2-L-MR is an enhanced GaN on silicon power transistor. GaN characteristics …
Shenzhen Mingjiada Electronics Co., Ltd [Supply] Infineon GS-065-018-2-L-MR CoolGaN™ Transistors 650 V ≤ G3 with very high efficiency and reliability.
Overview:
The GS-065-018-2-L-MR is an enhanced GaN on silicon power transistor. GaN characteristics allow high current, high voltage breakdown, and high switching frequency. The bottom-cooled transistor in an 8x8 mm PDFN package enables the ideal power consumption required for modern USB-C adapters and chargers or server and data centre applications.
Model: GS-065-018-2-L-MR
Year: 24+
Package: PDFN 8x8
Description: Surface Mount N-Channel 650 V 18A (Tc) 8-PDFN (8x8)
Features
Enhanced HEMT - Normally Closed
Ultra-fast switching
No reverse recovery charge
Reverse conduction capability
Low gate charge, low output charge
Excellent commutation strength
JEDEC compliant (JESD47, JESD22)
Bottom cooling
Zero reverse recovery loss
Source detection pads for optimal gate drive
Fast, controlled fall and rise times
RoHS 3(6+4) compliant
Application Areas
AC-DC
USB powered - USB PD adapters and chargers
Power supplies
Industrial
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Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
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