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Infineon FF55MR12W1M1HB70 Silicon Carbide CoolSiC™ MOSFET Half Bridge Module
Infineon FF55MR12W1M1HB70 Silicon Carbide CoolSiC™ MOSFET Half Bridge ModuleProduct DescriptionFF55MR12W1M1HB70 is 1200V 55mΩ EasyDUAL™ 1B Silicon Carbide CoolSiC™ MOSFET Half Bridge Module.FeatureWide RBSOAVery low stray inductanceEnlarged gate d…
Infineon FF55MR12W1M1HB70 Silicon Carbide CoolSiC™ MOSFET Half Bridge Module
Product Description
FF55MR12W1M1HB70 is 1200V 55mΩ EasyDUAL™ 1B Silicon Carbide CoolSiC™ MOSFET Half Bridge Module.
Feature
Wide RBSOA
Very low stray inductance
Enlarged gate drive voltage window
PressFIT pins
High thermal conductivity
Benefits
Extended maximum gate-source voltage of +23 V and -10 V
Tvjop under overload condition with up to 175°C
Best cost-performance ration which leads to reduced system costs
Enabling high frequency operation and improvement for reduced cooling requirements
Applications
EV charging
Industrial motor drives and controls
Servo motor drive and control
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Time:2024-11-18
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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