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NOVOSENSE launched a new integrated Power Stage product NSG65N15K, which integrates a high-voltage half-bridge driver and two 650V GaN switch tubes, which can be widely used in a variety of GaN application scenarios such as fast charge, energy storage…
NOVOSENSE launched a new integrated Power Stage product NSG65N15K, which integrates a high-voltage half-bridge driver and two 650V GaN switch tubes, which can be widely used in a variety of GaN application scenarios such as fast charge, energy storage, and server power supply.
Product Description:
The NSG65N15K-DQAFR is a system-level Power Stage product launched by NOVOSENSE, which integrates the half-bridge driver NSD2621 and two GaN switch tubes with voltage resistance of 650V and resistance of 150mΩ, and the working current can reach 20A.
The NSG65N15K also integrates a bootstrap diode, and built-in adjustable dead zone time, undervoltage protection, overtemperature protection functions, which is conducive to the safe and reliable operation of GaN applications, and gives full play to its high frequency and high speed characteristics.
Key Features:
- Integrated 650V GaN switch tube and half-bridge driver
- GaN resistance 150mΩ
- No reverse recovery loss
- Built-in LDO makes the drive voltage more stable and reliable
- High and low edge independent UVLO protection function
- Internal adjustable dead zone time
- Built-in bootstrap diode
- Operating temperature :-40℃ ~125℃
- Package form: QFN (9*9mm)
Applications:
- Totem pole Half-bridge or full-bridge topology such as PFC, ACF, and LLC
- Adapter High-density power supply
- Photovoltaic, motor drive and new energy
Functional block diagram:
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Time:2024-11-19
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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