Welcome Here  Shenzhen Mingjiada Electronics Co., Ltd.

sales@hkmjd.com

英banner
Shenzhen  Mingjiada Electronics Co., Ltd.

Service Telephone:86-755-83294757

Product Classification

AI Processor Chip

AI Accelerators

Home /Company Dynamics /

Infineon Launches N-Channel OptiMOS™ Power MOSFET-IPB038N12N3G

Infineon Launches N-Channel OptiMOS™ Power MOSFET-IPB038N12N3G

Source:our siteTime:2024-07-01Views:

Today, Infineon introduces the N-channel OptiMOS™ power MOSFET-IPB038N12N3G is the leading power MOSFET offering the highest power density and energy-efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small packa…

Today, Infineon introduces the N-channel OptiMOS™ power MOSFET-IPB038N12N3G is the leading power MOSFET offering the highest power density and energy-efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small package size make them ideal for meeting the demanding requirements of voltage regulator solutions in server, datacom and telecom applications. Ultra-fast switching control FETs and low EMI synchronous FETs provide easy-to-design solutions. Infineon's N-channel OptiMOS™ power MOSFETs provide excellent gate charge and are optimised for DC-DC conversion.


Introduction

The 120V OptiMOS™ family offers the industry's lowest on-resistance and fastest switching performance for a wide range of applications, enabling excellent performance. 120V OptiMOS™ technology opens up new possibilities to help achieve optimised solutions.


Feature Description

Superior switching performance

World's lower (R Ds(on))

Very low Qg and Qgd

Outstanding gate charge x R DS(on) products (FOM)

RoHS compliant - halogen free

MSL1 rating 2


Specification

Manufacturer: Infineon

Product Category: MOSFETs

Technology: Si

Mounting Style: SMD/SMT

Package / Case: D2PAK-3 (TO-263-3)

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds-Drain-source breakdown voltage: 120 V

Id-Continuous drain current: 120 A

Rds On-drain on-resistance: 3.2 mOhms

Vgs - gate-source voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 2 V

Qg-gate charge: 211 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 175 C

Pd-power dissipation: 300 W

Channel mode: Enhancement

Trademark: OptiMOS

Series: OptiMOS 3

Configuration: Single

Fall time: 21 ns

Forward transconductance - min: 83 S

Height: 4.4 mm

Length: 10 mm

Product Type: MOSFET

Rise Time: 52 ns

Factory Package Quantity: 1000

Sub Category: MOSFETs

Transistor Type: 1 N-Channel

Typical Off Delay Time: 70 ns

Typical turn-on delay time: 35 ns

Width: 9.25 mm

IPB038N12N3G.jpg

About Infineon Technologies

Infineon is a leading global semiconductor technology company committed to creating a more convenient, safe and environmentally friendly world. We offer a comprehensive range of semiconductor solutions that enable efficient energy management, smart mobility, and secure, seamless communications that connect the real and digital worlds.

Company Introduction
About Us
News Information
Honorary Qualification
Inventory Query
Classification Query
Supplier Query
Help Center
Online Inquiry
Common Problem
Site Map
Contact us

Contact Number:86-755-83294757

Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585

Business Hours:9:00-18:00

E-mail:sales@hkmjd.com

Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong

CopyRight ©2022 Copyright belongs to Mingjiada   Yue ICP Bei No. 05062024-12

Official QR Code

Brand Index:

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

Links:

skype:mjdsaler