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Today, Infineon introduces the N-channel OptiMOS™ power MOSFET-IPB038N12N3G is the leading power MOSFET offering the highest power density and energy-efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small packa…
Today, Infineon introduces the N-channel OptiMOS™ power MOSFET-IPB038N12N3G is the leading power MOSFET offering the highest power density and energy-efficient solutions. Ultra-low gate and output charges and the lowest on-resistance in a small package size make them ideal for meeting the demanding requirements of voltage regulator solutions in server, datacom and telecom applications. Ultra-fast switching control FETs and low EMI synchronous FETs provide easy-to-design solutions. Infineon's N-channel OptiMOS™ power MOSFETs provide excellent gate charge and are optimised for DC-DC conversion.
Introduction
The 120V OptiMOS™ family offers the industry's lowest on-resistance and fastest switching performance for a wide range of applications, enabling excellent performance. 120V OptiMOS™ technology opens up new possibilities to help achieve optimised solutions.
Feature Description
Superior switching performance
World's lower (R Ds(on))
Very low Qg and Qgd
Outstanding gate charge x R DS(on) products (FOM)
RoHS compliant - halogen free
MSL1 rating 2
Specification
Manufacturer: Infineon
Product Category: MOSFETs
Technology: Si
Mounting Style: SMD/SMT
Package / Case: D2PAK-3 (TO-263-3)
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds-Drain-source breakdown voltage: 120 V
Id-Continuous drain current: 120 A
Rds On-drain on-resistance: 3.2 mOhms
Vgs - gate-source voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2 V
Qg-gate charge: 211 nC
Minimum operating temperature: - 55 C
Maximum operating temperature: + 175 C
Pd-power dissipation: 300 W
Channel mode: Enhancement
Trademark: OptiMOS
Series: OptiMOS 3
Configuration: Single
Fall time: 21 ns
Forward transconductance - min: 83 S
Height: 4.4 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 52 ns
Factory Package Quantity: 1000
Sub Category: MOSFETs
Transistor Type: 1 N-Channel
Typical Off Delay Time: 70 ns
Typical turn-on delay time: 35 ns
Width: 9.25 mm
About Infineon Technologies
Infineon is a leading global semiconductor technology company committed to creating a more convenient, safe and environmentally friendly world. We offer a comprehensive range of semiconductor solutions that enable efficient energy management, smart mobility, and secure, seamless communications that connect the real and digital worlds.
Time:2024-11-20
Time:2024-11-20
Time:2024-11-20
Time:2024-11-20
Contact Number:86-755-83294757
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