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NCD57001FDWR2G: Isolated high current SiC/MOSFET/IGBT gate driver

Overview

The NCD57001FDWR2G is a high-current single-channel SiC/MOSFET/IGBT driver with internal current isolation designed to improve system efficiency and reliability. The gate driver features complementary inputs, open leak fault and ready output, active Miller clamp, precise undervoltage latching (UVLO), desaturation (DESAT) protection, and soft shutdown during desaturation (DESAT). On Semiconductor NCD57001FDWR2G gate drivers provide 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. The gate driver features 5kVrms (UL1577-compliant) current isolation and 1200Viorm (operating voltage) functionality. Typical applications include solar inverters, motor control, uninterruptible power supplies (UPS), industrial power supplies, and welding.

Features

+4/-6A high current output at IGBT Miller platform voltage

Low output impedance for enhanced IGBT drives

Propagation delay time is short, with accurate matching

Active Miller clamp prevents stray grid conduction

DESAT protection with programmable delay

Negative voltage (down to -9 V) capability for DESAT

Soft shutdown during IGBT short circuit

IGBT gate clamp during short circuit

IGBT grid active pull-down

The UVLO threshold is small, enabling bias flexibility

Wide bias voltage range, including negative VEE2

Input voltage range: 3.3V to 5V

Designed to comply with AEC-Q100 standards

5000V current isolation (to meet UL1577 requirements)

1200V working voltage (according to VDE0884-10 requirements)

High transient immunity

High electromagnetic immunity

Lead-free, halogen-free, in line with RoHS directive

Applications

Solar inverter

Motor control

UPS

Industrial power supply

Welding