Welcome Here Shenzhen Mingjiada Electronics Co., Ltd.
sales@hkmjd.com
sales@hkmjd.com
Service Telephone:86-755-83294757
Latest Information
Home
/Industry Information
/
Samsung Breaks Through 1c Nanometre DRAM Process Bottleneck, Set to Begin Mass Production
On 1 July, according to reports from Korean media outlets ETNews, AJUNEWS, and fnnews, Samsung Electronics granted production readiness approval (PRA) for its sixth-generation 10nm-class DRAM memory process, 1c nanometre, on the afternoon of the previ…
On 1 July, according to reports from Korean media outlets ETNews, AJUNEWS, and fnnews, Samsung Electronics granted production readiness approval (PRA) for its sixth-generation 10nm-class DRAM memory process, 1c nanometre, on the afternoon of the previous day. This marks the completion of Samsung's 1c nm memory development and its readiness to transition to mass production.
Samsung Electronics' HBM4 12Hi memory will utilise the 1c nm DRAM die, and the performance of this memory process will significantly influence the revenue performance of the DS Division's Memory Business Unit over the next 1-2 years.
Prior to Samsung Electronics, SK Hynix and Micron have also completed the development of their sixth-generation 20-10nm process DRAM, bringing the three major memory manufacturers closer to the 10nm threshold.
![[TI] TPS7A8500RGRR Low-Noise (4.4 µVRMS), Low-Dropout Linear Regulator (LDO)](/upload/202507/25/202507251453128615.jpg)
Time:2025-07-25
Time:2025-07-25
Time:2025-07-25
Time:2025-07-25
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links:
