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Shenzhen Mingjiada Electronics Co., Ltd.
Model

VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

Service Telephone:86-755-83294757

Product Classification

Integrated Circuit Chip

Ethernet Video Amplifiers CAN Transceiver Server Management Processor High Bandwidth Bus Switch Differential Amplifiers Analogue Crosspoint Switch HDMI Transmitter Laser Driver Analog Switch IC Ultrasonic receiver Multiplexer and demultiplexer Video Processor Video Encoder Interface-Serial Digital Interface (SDI) IC AI chips Interface-retimer Transimpedance Amplifiers CXL Near Memory Accelerator and Memory Expansion Controller Analog multiplier RS-422/RS-485 Interface IC Isolated CAN transceiver Instrumentation Amplifiers PCI Express Switches

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips

Filter

Band Stop Filters Low Pass Filter Bandpass Filters SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

Wireless Connection

Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wireless Communication Chip Near Field Communication (NFC) WiFi Bluetooth Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless Communication Module Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

AI Processor Chip

Discrete Semiconductor

Transistor - FET, MOSFET - Single Bipolar (BJT) transistor Silicon Carbide (SiC) JFET Silicon Diodes Power Modules Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Boost controller Power over Ethernet (PoE) controller

Connectors

Crimp-To-Wire Connector Nearstack Connector ExtremePort Swift Connectors Multi-Trak™ Connectors VITA 67.3 Connectors SpaceVPX VITA 78 Connectors ExtremePort Z-Link Connectors Displayport Connectors Magnetic Jack Connectors SAS/PCIe 5.0 Connectors SAS/PCIe 4.0 Connectors Mini USB Connectors SFP112G Connectors MiniSAS HD Connectors OSFP-XD Connectors DSFP Connectors CXP Connectors QSFP Connectors OSFP Connectors SFP Connectors CFP2 Connectors Mini Cool Edge IO Connectors SlimSAS™ Connectors Mini-SAS High Density Connectors

Sensor

Accelerometer Magneto-Resistive Sensors Angle sensor Hall Effect Switches Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM SSD Controllers AI Memory. F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

Resistor network

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Industry Information
Home /Industry Information /

Samsung Breaks Through 1c Nanometre DRAM Process Bottleneck, Set to Begin Mass Production

Samsung Breaks Through 1c Nanometre DRAM Process Bottleneck, Set to Begin Mass Production

Source:our siteTime:2025-07-01Views:

On 1 July, according to reports from Korean media outlets ETNews, AJUNEWS, and fnnews, Samsung Electronics granted production readiness approval (PRA) for its sixth-generation 10nm-class DRAM memory process, 1c nanometre, on the afternoon of the previ…

On 1 July, according to reports from Korean media outlets ETNews, AJUNEWS, and fnnews, Samsung Electronics granted production readiness approval (PRA) for its sixth-generation 10nm-class DRAM memory process, 1c nanometre, on the afternoon of the previous day. This marks the completion of Samsung's 1c nm memory development and its readiness to transition to mass production.


Samsung Electronics' HBM4 12Hi memory will utilise the 1c nm DRAM die, and the performance of this memory process will significantly influence the revenue performance of the DS Division's Memory Business Unit over the next 1-2 years.

QQ图片20250701110947.png

Prior to Samsung Electronics, SK Hynix and Micron have also completed the development of their sixth-generation 20-10nm process DRAM, bringing the three major memory manufacturers closer to the 10nm threshold.

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Contact Number:86-755-83294757

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