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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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BGA10H1MN9 high band low noise amplifier with gain stepping and MIPI control

BGA10H1MN9 high band low noise amplifier with gain stepping and MIPI control

Source:our siteTime:2024-05-24Views:

Description:The BGA10H1MN9 is designed for 4G and 5G applications and covers 3GPP bands between 2.3 and 2.7 GHz (e.g. B7 and B41). Due to the high gain and ultra-low noise factor, the loss of the LNA front end can be compensated and the data rate can …

Description:

The BGA10H1MN9 is designed for 4G and 5G applications and covers 3GPP bands between 2.3 and 2.7 GHz (e.g. B7 and B41). Due to the high gain and ultra-low noise factor, the loss of the LNA front end can be compensated and the data rate can be significantly improved. The MIPI interface provides comprehensive control over multiple gain modes and bias modes to improve the overall system dynamic range.


BGA10H1MN9 Parameter:

Frequency: 2.3GHz ~ 2.7GHz

P1dB: -19 DBM

Gain: 19.7dB

Noise factor: 12.9dB

Rf type: 4G, 5G

Voltage - Power supply: 1.1V ~ 2V

Current - Power supply: 7.5mA

Test frequency: 2.6GHz

Grade: -

Qualification: -

Mounting type: Surface mount type

Package/case: 9-XFLGA

Supplier device package: PG-TSNP-9-2


Features:

Frequencies range from 2.3 to 2.7 GHz

Power gain :19.7 dB

Low noise factor: 0.8dB

Low power consumption :6.0 mA

Get mode support for MediaTek, LSI, and Qualcomm platforms

MIPI·RFFE 3.0

The RF output matches 50ω internally

Support 1.2V and 1.8V VDD/VIO

Software programmable by MIPI RFFE USID Company

Supports four USIDs

Small size 1.1mm x 1.1mm

RoHS and WEEE compliant packaging


Applications:

• LTE / 5G smartphones and industrial applications


Block Diagram：

框图.png

If interested, please contact Mr. Chen:

Tel: +8613410018555

Email: sales@hkmjd.com


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